Optimization of Energy Conversion Efficiency Betavoltaic Element Based on Silicon

Authors A.A. Krasnov1 , S.A. Legotin1 , Yu.K. Omel’chenko1, S.I. Didenko1 , V.N. Murashev1 , O.I. Rabinovich1 , S.Yu. Yurchuk1 , V.P. Yaromsky2, A.V. Popkova1

1 NUST “MISiS”, 4, Leninskiy Prosp., 119049 Moscow, Russiа

2 JSC "Scientific, Research & Production Corporation of Measuring Equipment", 2, Pioneer St., 141074 Moscow region, Korolev, Russia

Issue Volume 7, Year 2015, Number 4
Dates Received 28 September 2015; published online 10 December 2015
Citation A.A. Krasnov, S.A. Legotin, Yu.K. Omel’chenko, et al., J. Nano- Electron. Phys. 7 No 4, 04004 (2015)
PACS Number(s) 00.05.Tp, 85.60.Jb
Keywords Betavoltaic effect betavoltaic battery, p-i-n diode (3) , Gettering.
Annotation It was developed the technology of manufacturing planar betavoltaic converter based on silicon, providing a higher rate of conversion of ionizing radiation into electrical energy by reducing reverse currents. The active region of silicon p-i-n structure is 1 cm2, which is irradiated by the of radionuclide 63Ni with the activity 2,7 mCi/cm2. The results of experimental studies of C-V samples are presented. The values of the open-circuit voltage (Voc) 0.111 V are presented and short circuit current density (Jsc) 27 nA/cm2. The ma-ximum density of output power (Pmax) was 1.52 nW/cm2.

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