Features of Influence of X-radiation and Magnetic Field on the Electrical Characteristics of Barrier Structures Based on p-Si with Dislocation, Designed for Solar Energy

Authors D.P. Slobodzyan , B.V. Pavlyk , M.O. Kushlyk

Ivan Franko National University of Lviv, 107, Henerala Tarnavs’kogo St., 79000 Lviv, Ukraine

Е-mail slobodzyan_d@ukr.net
Issue Volume 7, Year 2015, Number 4
Dates Received 28 July 2015; published online 10 December 2015
Citation D.P. Slobodzyan, B.V. Pavlyk, M.O. Kushlyk, J. Nano- Electron. Phys. 7 No 4, 04051 (2015)
PACS Number(s) 61.72.Lk, 61.72.Uf, 73.20.At, 73.40.Qv, 74.25.Ha, 78.70. – g
Keywords Silicon (58) , Surface-barrier structures, X-rays (2) , Magnetic field (7) , Dislocations (2) , I-V characteristics (2) , C-V characteristics (3) , Surface states.
Annotation This paper reviews the influence of low doses X-rays (D < 400 Gy) and weak magnetic field (B = 0.17 T) on the I-V and C-V characteristics changes of surface-barrier Bi-Si-Al structures based on p-Si crystals with dislocation concentration > 102 cm – 2 in the surface layer of silicon. The charge accumulation in the SiO2 dielectric layer of the structures under the action of external fields was investigated and analyzed.

List of References

English version of article