Features of Influence of X-radiation and Magnetic Field on the Electrical Characteristics of Barrier Structures Based on p-Si with Dislocation, Designed for Solar Energy

Authors D.P. Slobodzyan , B.V. Pavlyk , M.O. Kushlyk
Affiliations

Ivan Franko National University of Lviv, 107, Henerala Tarnavs’kogo St., 79000 Lviv, Ukraine

Е-mail [email protected]
Issue Volume 7, Year 2015, Number 4
Dates Received 28 July 2015; published online 10 December 2015
Citation D.P. Slobodzyan, B.V. Pavlyk, M.O. Kushlyk, J. Nano- Electron. Phys. 7 No 4, 04051 (2015)
DOI
PACS Number(s) 61.72.Lk, 61.72.Uf, 73.20.At, 73.40.Qv, 74.25.Ha, 78.70. – g
Keywords Silicon (58) , Surface-barrier structures, X-rays (2) , Magnetic field (7) , Dislocations (2) , I-V characteristics (2) , C-V characteristics (3) , Surface states.
Annotation This paper reviews the influence of low doses X-rays (D < 400 Gy) and weak magnetic field (B = 0.17 T) on the I-V and C-V characteristics changes of surface-barrier Bi-Si-Al structures based on p-Si crystals with dislocation concentration > 102 cm – 2 in the surface layer of silicon. The charge accumulation in the SiO2 dielectric layer of the structures under the action of external fields was investigated and analyzed.

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