Initiation of Polarized State in the Tantalum Oxide Thin Films Grown by Magnetron Sputtering on a Substrate of Monocrystalline Silicon (100) Followed by Argon and Oxygen Ions
| Authors | I.Yu. Goncharov1 , D.A. Kolesnikov1 , A.V. Zykova2 , V.I. Safonov2 |
| Affiliations | 1 Belgorod National Research University, 85, Pobedy St., 308015 Belgorod, Russia 2 National Science Center “Kharkov Institute of Physics and Technology“, 1, Academicheskaya St., 61108 Kharkov, Ukraine |
| Е-mail | |
| Issue | Volume 7, Year 2015, Number 4 |
| Dates | Received 01 October 2015; published online 24 December 2015 |
| Citation | I.Yu. Goncharov, D.A. Kolesnikov, A.V. Zykova, V.I. Safonov, J. Nano- Electron. Phys. 7 No 4, 04074 (2015) |
| DOI | |
| PACS Number(s) | 81.15.Cd, 77.22.Ej |
| Keywords | Thin films of tantalum oxide, Magnetron sputtering (14) , Kelvin probe microscopy, Polarization and depolarization. |
| Annotation | The pictures of the induced state and the surface potential distribution in thin films of tantalum oxide produced by magnetron sputtering onto a substrate of monocrystalline silicon (100) followed by low energy argon and oxygen ions was investigated by atomic force microscopy in spreading resistance and scanning Kelvin probe microscopy mode. It was shown that it is possible to polarize or depolarize the coating, and then to visualize the state of the induced polarization using an electric field applied via the conductive cantilever in contact spreading resistance microscopy mode. It was found that treatment with argon ions increases the contrast of the of the surface potential distribution maps from 1.2 V to 2,3 V for negative – 10 V voltage on the probe and from 9,6 V to 19,2 V for a positive + 10 V voltage in comparison with the oxygen ions. |
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