Effect of Ionizing Radiation on the Properties of Porous Silicon Nanostructures

Authors I.B. Olenych , L.S. Monastyrskii , O.S. Dzendzelyuk
Affiliations

Ivan Franko National University of Lviv, 50, Dragomanov St., 79005 Lviv, Ukraine

Е-mail [email protected]
Issue Volume 7, Year 2015, Number 4
Dates Received 31 August 2015; revised manuscript received 02 October 2015; published online 24 December 2015
Citation I.B. Olenych, L.S. Monastyrskii, O.S. Dzendzelyuk, J. Nano- Electron. Phys. 7 No 4, 04063 (2015)
DOI
PACS Number(s) 73.63. – b, 78.55.Mb
Keywords Porous silicon (3) , Radiation (21) , Conductivity (43) , Thermally stimulated depolarization, Photoluminescence (17) .
Annotation The influence of ionizing radiation from 226Ra source on the electrical and photoluminescent properties of porous silicon nanostructures was investigated. After the radiation exposure, AC resistance of experimental samples decreased and luminescence band was changed. Temperature dependencies of electrical conductivity and depolarization current were studied in 80-325 K temperature range. Effect of radiation on the energy distribution of localized electronic states in porous silicon based structures is analyzed. Obtained results expand the application prospective of porous silicon for radiation sensing.

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