The Electron Scattering on Local Potential of Crystal Defects in GaSb Whiskers
| Authors | A.A. Druzhinin1,2 , I.P. Ostrovskii1,2 , Yu.N. Khoverko1,2, І.I. Khytruk1 |
| Affiliations | 1 Lviv Polytechnic National University, 12, S. Bandera St., 79013, Lviv, Ukraine 2 International Laboratory of High Magnetic Fields and Low Temperatures, 95, Gajowicka St., Wroclaw, Poland |
| Е-mail | |
| Issue | Volume 7, Year 2015, Number 4 |
| Dates | Received 23 September 2015; published online 24 December 2015 |
| Citation | A.A. Druzhinin, I.P. Ostrovskii, Yu.N. Khoverko, І.I. Khytruk, J. Nano- Electron. Phys. 7 No 4, 04084 (2015) |
| DOI | |
| PACS Number(s) | 42.79.Wc, 84.60.Jt |
| Keywords | Charge carrier scattering, Transport phenomena, GaSb whiskers. |
| Annotation | The concentration and mobility of electrons were examined by Hall measurements in n-GaSb whiskers with defect concentration of about 5 × 1017 cm – 3. The dependences of electron mobility and Hall factor on temperature were calculated using the short-range scattering models in the temperature interval 4.2-500 К. The electron interaction with different types of lattice defects was considered. |
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List of References |
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