Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor

Authors I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka

JSC "RPC "Istok" named after Shokin", 2A, Vokzalnaya st., 141190 Fryazino, Moscow region, Russia

Issue Volume 8, Year 2016, Number 2
Dates Received 12 March 2016; published online 21 June 2016
Citation I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka, J. Nano- Electron. Phys. 8 No 2, 02044 (2016)
DOI 10.21272/jnep.8(2).02044
PACS Number(s) 73.40.Lq, 85.30.Kk
Keywords Gallium nitride (2) , Ohmic contacts (2) , Encapsulation, Gate AlGaN / GaN HEMT.
Annotation Reported about study of processes of formation of Ti / Al / Ni / Au ohmic contacts to heterostructures AlGaN / GaN and gate Ni / Au. Investigated of process recess the semiconductor layer for minimum resistance of ohmic contact – 0.4 Ohm·mm. Studied influence of encapsulation ohmic contacts on their surface morphology.

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