Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor
| Authors | I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka |
| Affiliations | JSC "RPC "Istok" named after Shokin", 2A, Vokzalnaya st., 141190 Fryazino, Moscow region, Russia |
| Е-mail | |
| Issue | Volume 8, Year 2016, Number 2 |
| Dates | Received 12 March 2016; published online 21 June 2016 |
| Citation | I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka, J. Nano- Electron. Phys. 8 No 2, 02044 (2016) |
| DOI | 10.21272/jnep.8(2).02044 |
| PACS Number(s) | 73.40.Lq, 85.30.Kk |
| Keywords | Gallium nitride (2) , Ohmic contacts (2) , Encapsulation, Gate AlGaN / GaN HEMT. |
| Annotation | Reported about study of processes of formation of Ti / Al / Ni / Au ohmic contacts to heterostructures AlGaN / GaN and gate Ni / Au. Investigated of process recess the semiconductor layer for minimum resistance of ohmic contact – 0.4 Ohm·mm. Studied influence of encapsulation ohmic contacts on their surface morphology. |
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List of References |
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