Perspective Method of Betavoltaic Converter Creation

Authors K.V. Rudenko1, A.V. Miakonkih1, A.E. Rogojin1, S.V. Bogdanov2, E.T. Lelekov2, V.G. Sidorov2, P.V. Zelenkov2

1 Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia

2 Reshetnev Siberian State Aerospace University, Krasnoyarsk, Russia

Issue Volume 8, Year 2016, Number 2
Dates Received 18 February 2016; published online 21 June 2016
Citation K.V. Rudenko, A.V. Miakonkih, A.E. Rogojin, et al., J. Nano- Electron. Phys. 8 No 2, 02022 (2016)
DOI 10.21272/jnep.8(2).02022
PACS Number(s) 00.05.Tp, 85.60.Jb
Keywords Betavoltaic element, p-i-n diode (3) , Plasma-immersion ion implantation, Cryo process, Scalloping.
Annotation Some results on planar diode structure creation by the method of a plasma-immersion ion implantation is presented in this paper. Obtained leakage current ~ 1 uA/cm2 at reverse voltage – 1 V. The cryogenic plasmochemical silicon etching process is developed, able to form the structured silicon layer with system of deep holes with high aspect ratio.

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