The Influence of the Technological Factors of Obtaining on the Surface Morphologyand Electrical Properties of the PbTe Films doped Bi

Authors Ya.P. Saliy , B.S. Dzundza, I.S. Bylina , O.B. Kostyuk
Affiliations

Vasyl Stefanyk PreCarpathian National University 57, Shevchenko St., 76025 Ivano-Frankivsk, Ukraine

Е-mail [email protected]
Issue Volume 8, Year 2016, Number 2
Dates Received 18 February 2016; published online 21 June 2016
Citation Ya.P. Saliy, B.S. Dzundza, I.S. Bylina, O.B. Kostyuk, J. Nano- Electron. Phys. 8 No 2, 02045 (2016)
DOI 10.21272/jnep.8(2).02045
PACS Number(s) 73.50.Lw, 73.63.Bd
Keywords Lead telluride, Doping (20) , Thin films (60) , Scattering (20) , Surface (43) .
Annotation

The influence of technological factors obtaining: time and temperature of the evaporator and the substrate on the surface morphology and electrical properties of the deposited from the vapor in a vacuum on a substrate of sital films PbTe doped Bi is researched. The atomic force microscopy, image processing methods and Hall research are used. The influence of the shape parameters of surface crystallites on the mobility of free charge carriers is analyzed.

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