Features of Mg2Si Layer Growth in Si/Mg2Si Multilayers

Authors L.E. Konotopskyi, I.A. Kopylets, V.A. Sevrykova, E.N. ZubarevV.V. Kondratenko
Affiliations

National Technical University “Kharkiv Polytechnic Institute”,21, Frunze St., 61002 Kharkiv, Ukraine

Е-mail [email protected]
Issue Volume 8, Year 2016, Number 2
Dates Received 20 January 2016; published online 21 June 2016
Citation L.E. Konotopskyi, I.A. Kopylets, V.A. Sevrykova, E.N. ZubarevV.V. Kondratenko, J. Nano- Electron. Phys. 8 No 2, 02021 (2016)
DOI 10.21272/jnep.8(2).02021
PACS Number(s) 68.60. – p, 68.60.Dv, 68.65.Ac
Keywords X-Ray mirror, Magnesium silicide, X-Ray phase analysis, Electron microdiffraction.
Annotation

Features of magnesium siliced layer growth in Si/Mg2Si multilayers in initial state and after thermal annealing were studied by methods of transmission electron microscopy and X-Ray scattering. As-deposited magnesium silicide layers are amorphous with nanocrystal inclusions of metastable h-Mg2Si. Formation of Mg2Si in hexagonal modification occurs under the influence of stress produced by silicon layers. At T = 723 К Mg2Si layers finished crystallizes in hexagonal modification, with some coarsening of grains. That is accompanied with 7.3 % reduction in period of the Si/Mg2Si multilayer.

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