Features of Mg2Si Layer Growth in Si/Mg2Si Multilayers
| Authors | L.E. Konotopskyi, I.A. Kopylets, V.A. Sevrykova, E.N. ZubarevV.V. Kondratenko |
| Affiliations |
National Technical University “Kharkiv Polytechnic Institute”,21, Frunze St., 61002 Kharkiv, Ukraine |
| Е-mail | kkana357@gmail.com |
| Issue | Volume 8, Year 2016, Number 2 |
| Dates | Received 20 January 2016; published online 21 June 2016 |
| Citation | L.E. Konotopskyi, I.A. Kopylets, V.A. Sevrykova, E.N. ZubarevV.V. Kondratenko, J. Nano- Electron. Phys. 8 No 2, 02021 (2016) |
| DOI | 10.21272/jnep.8(2).02021 |
| PACS Number(s) | 68.60. – p, 68.60.Dv, 68.65.Ac |
| Keywords | X-Ray mirror, Magnesium silicide, X-Ray phase analysis, Electron microdiffraction. |
| Annotation |
Features of magnesium siliced layer growth in Si/Mg2Si multilayers in initial state and after thermal annealing were studied by methods of transmission electron microscopy and X-Ray scattering. As-deposited magnesium silicide layers are amorphous with nanocrystal inclusions of metastable h-Mg2Si. Formation of Mg2Si in hexagonal modification occurs under the influence of stress produced by silicon layers. At T = 723 К Mg2Si layers finished crystallizes in hexagonal modification, with some coarsening of grains. That is accompanied with 7.3 % reduction in period of the Si/Mg2Si multilayer. |
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