Influence of Nanofilled Polymer Coatings on Radiation Stability in Silicon Crystals Used in Solar Energy

Authors L.P. Steblenko1 , A.A. Podolyan1 , L.M. Yashchenko2 , A.N. Kuryliuk1 , Yu.L. Kobzar1 , L.A. Voronzova2, D.V. Kalinichenko1 , A.N. Krit3 , S.N. Naumenko1
Affiliations

1 Faculty of Physics, Taras Shevchenko National University of Kyiv, 64/13, Volodymyrska St., 01601 Kyiv, Ukraine

2 Institute of Macromolecular Chemistry, National Academy of Sciences of Ukraine, 48, Kharkіvske Shose, 02160 Kyiv, Ukraine

3 Scientific Research Center "Physicochemical materials" Taras Shevchenko National University of Kyiv and NAS of Ukraine, Kyiv, Ukraine

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Issue Volume 8, Year 2016, Number 2
Dates Received 30 March 2016; published online 21 June 2016
Citation L.P. Steblenko, A.A. Podolyan, L.M. Yashchenko, et al., J. Nano- Electron. Phys. 8 No 2, 02054 (2016)
DOI 10.21272/jnep.8(2).02054
PACS Number(s) 61.72.Bb, 61.72.Cc, 61.72.Dd, 61.72.Hh, 66.30.Dn
Keywords Silicon (58) , X-ray (43) , Photovoltage (2) , Polymer coated, Nanofillers (polysiloxane particles).
Annotation This paper investigates the changes in the decay kinetics of photovoltage due to the influence of low-energy (W = 8 keV) X-ray on the structure of the "solar" silicon + nanofilled polymer coatings. It is shown that radiation-stimulated degradation of the short-term and long-term components of decay, which are depended on the carriers’ lifetime on the surface and near-surface layers of "solar" silicon (s-Si) crystals accordingly, is absent for s-Si crystals with filler content (polysiloxane particles) in an amount of 0.5 wt. %. It is determined that the essential loss of radiation stability in s-Si crystals is observed when filler content (polysiloxane particles) in an amount of C  0,001 % and C  1 %.

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