Numerical Investigation of Spatial Effects on the Silicon Solar Cell
| Authors | A.B. Nawale1, R.A. Kalal1, A.R. Chavan2, T.D. Dongale2, R.K. Kamat1 |
| Affiliations | 1 Embedded System and VLSI Research Laboratory, Department of Electronics, Shivaji University, 416004 Kolhapur, India 2 Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, 416004 Kolhapur, India |
| Е-mail | |
| Issue | Volume 8, Year 2016, Number 2 |
| Dates | Received 07 January 2016; published online 21 June 2016 |
| Citation | A.B. Nawale, R.A. Kalal, A.R. Chavan, et al., J. Nano- Electron. Phys. 8 No 2, 02002 (2016) |
| DOI | 10.21272/jnep.8(2).02002 |
| PACS Number(s) | 85.30. – z, 88.40.fc |
| Keywords | Silicon solar cell (6) , Numerical simulation (4) , Statistical analysis. |
| Annotation | Investigating the effect of device dimension on the silicon solar cell, by using the PC1D numerical simulation environment, we report strong correlation of efficiency of the silicon solar cell with its size. The results showcase finer efficiency at the lower n-type thickness and higher p-type thickness. The internal quantum efficiency (IQE) and external quantum efficiency (EQE) too exhibit variation with the device size. As a whole, based on the statistical analysis, especially regression, variance, and best subsets selection, the paper depicts that the p-type thickness, ISC and VOC are the preeminent parameters to model the silicon solar cell. |
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