Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin Films

Authors Rajesh Singh , Radha Srinivasan

Department of Physics, University of Mumbai, Santacruz (East), 400098 Mumbai, India

Issue Volume 8, Year 2016, Number 2
Dates Received 20 October 2016; published online 21 June 2016
Citation Rajesh Singh, Radha Srinivasan, J. Nano- Electron. Phys. 8 No 2, 02036 (2016)
DOI 10.21272/jnep.8(2).02036
PACS Number(s) 68.37.Ps, 73.50. – h
Keywords CdSe thin films (2) , SHI (23) , XRD (90) , AFM (18) , I-V (25) .
Annotation Cadmium Selinide (CdSe) thin films prepared by thermal evaporation on glass substrates were irradiated with swift (100 MeV) Ni+7 ions at fluences of 1 × 1011 and 1 × 1012 cm – 2. The structural changes with respect to increasing fluence were observed by the means of X-ray diffraction (XRD). The modification in surface morphology and electrical properties has been analyzed as a function of fluence using XRD, AFM and I-V techniques. The AFM micrographs of irradiated thin films show the formation of small spherical grains and decrease in surface roughness with increasing fluence as well as I-V measurement revels that decrease in resistivity with increasing fluence.

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