The Local Electron Scattering on the Lattice Defects in InSb and InN

Authors O.P. Malyk
Affiliations

Lviv Polytechnic National University, 1, Square of St. George, 79013 Lviv, Ukraine

Е-mail [email protected]
Issue Volume 8, Year 2016, Number 2
Dates Received 15 February 2016; published online 21 June 2016
Citation O.P. Malyk, J. Nano- Electron. Phys. 8 No 2, 02018 (2018)
DOI 10.21272/jnep.8(2).02018
PACS Number(s) 72.20.Dp
Keywords Transport phenomena, Indium antimonide (2) , Indium nitride.
Annotation In proposed paper the interaction of electrons with lattice defects characterized by the potential of the limited action radius in indium antimonide and nitride crystals is considered. The dopant concentration in observed n-InSb crystals was (1÷ 8) × 1014 cm – 3 and in n-InN sample ≈ 6 × 1017 cm – 3. In the framework of the analytical solution of the stationary kinetic Boltzmann equation using the short-range principle the temperature dependences of electron mobility, Hall factor and thermoelectric power in indium antimonide in the temperature range 8-700 K are calculated. For indium nitride crystal the temperature dependences of electron mobility and Hall factor in the interval 4.2-560 K are presented.

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