The Influence of Ultrasound on Formation of Self-organized Uniform Nanoclusters

Authors R.M. Peleshchak , O.V. Kuzyk , O.O. Dan’kiv
Affiliations

Ivan Franko Drohobych State Pedagogical University, 24, Ivan Franko St., 82100 Drohobych, Ukraine

Е-mail [email protected]
Issue Volume 8, Year 2016, Number 2
Dates Received 29 January 2016; revised manuscript received 12 June 2016; published online 21 June 2016
Citation R.M. Peleshchak, O.V. Kuzyk, O.O. Dan’kiv, J. Nano- Electron. Phys. 8 No 2, 02014 (2016)
DOI 10.21272/jnep.8(2).02014
PACS Number(s) 61.46. – w, 43.35. + d
Keywords Self-organized nanocluster, Ultrasound (3) , Deformation (8) , Dot defects.
Annotation The non-linear diffusion-deformation theory of self-organization of nanoclusters of dot defects in semiconductor exposed to ultrasound treatment that considers the interaction of defects among themselves and with atoms of a matrix via the elastic field created by dot defects and an acoustic wave is developed. Within this theory the influence of ultrasound on the conditions of formation of spherical nanoclusters and their radius is investigated. The nanocluster size depending on average concentration of defects and amplitude of an acoustic wave is determined. It is established that ultrasonic treatment of the semiconductor in the process of formation of an ensemble of nanoclusters leads to reduction of dispersion of their sizes.

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