Автори | S.Yu. Glazov1, 2 , P.V. Badikova1 |
Афіліація |
1Volgograd State Social Pedagogical University, 27, Lenin Prosp., 400066 Volgograd, Russia 2Volgograd State Medical University, 1, Pavshikh Bortsov Sq., 400131 Volgograd, Russia |
Е-mail | ser-glazov@yandex.ru |
Випуск | Том 10, Рік 2018, Номер 2 |
Дати | Одержано 15.01.2018; опубліковано online 29.04.2018 |
Цитування | S.Yu. Glazov, P.V. Badikova, J. Nano- Electron. Phys. 10 No 2, 02020 (2018) |
DOI | https://doi.org/10.21272/jnep.10(2).02020 |
PACS Number(s) | 73.40.Gk, 72.80.Vp |
Ключові слова | Ionization of impurities, Ionization probability, Tunneling (9) , Gap graphene modification. |
Анотація |
An analytical expression for the probability of ionization of impurities in the gap modification of graphene in the presence of a constant electric field in the semiclassical approximation is received. The probability of ionization of impurities from the direction of the electric field strength vector is investigated. The probability of ionization in a constant electric field has a weakly pronounced anisotropy, manifested in the case when the width of the forbidden graphene band is greater than the energy of electron hopping between neighbouring lattice sites. The results are compared with those previously known for the spectrum given in the low-energy approximation. |
Перелік посилань |