Thin Film Systems Based on ZnO/SiC and ZnO/C

Автори A.Kh. Abduev , A.K. Akhmedov , A.Sh. Asvarov , S.Sh. Makhmudov
Приналежність

Institute of Physics, Dagestan Scientific Center Russian Academy of Sciences, 94, Yaragskogoy Str., 367015 Makhachkala, Russia

Е-mail cht-if-ran@mail.ru
Випуск Том 10, Рік 2018, Номер 2
Дати Одержано 12.01.2018; у відредагованій формі – 25.04.2018; опубліковано online 29.04.2018
Посилання A.Kh. Abduev, A.K. Akhmedov, A.Sh. Asvarov, S.Sh. Makhmudov, J. Nano- Electron. Phys. 10 No 2, 02041 (2018)
DOI https://doi.org/10.21272/jnep.10(2).02041
PACS Number(s) 68.65.Ac, 81.15.Cd,
Ключові слова Thin film (101) , Magnetron sputtering (14) , ZnO (88) , Carbon (56) , SiC (28) .
Анотація

The processes of formation of Zn/X/ZnO three-layer structures (where X – intermediate layer of C or SiC) by magnetron sputtering are studied. The processes taking place at the ZnO/C and ZnO/SiC interfaces of the multylayered films upon annealing in an inert gas are investigated. It is shown that the differences in the morphology and structure of the ZnO sublayers after annealing are due to the difference in chemical reactions occurring at the interfaces and the diffusion mechanisms of the components along the grain boundaries.

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