Автори | D.Yu. Matveev1, D.V. Starov1, E.V. Demidov2 |
Афіліація |
1Astrakhan State University, 20a, Tatischev Str., 414056 Astrakhan, Russia 2Herzen State Pedagogical University, 6, Kazanskaya (Plekhanova) Str., 191186 St. Petersburg, Russia |
Е-mail | anila200586@mail.ru |
Випуск | Том 10, Рік 2018, Номер 2 |
Дати | Одержано 31.10.2017; опубліковано online – 29.04.2018 |
Цитування | D.Yu. Matveev, D.V. Starov, E.V. Demidov, J. Nano- Electron. Phys. 10 No 2, 02047 (2018) |
DOI | https://doi.org/10.21272/jnep.10(2).02047 |
PACS Number(s) | 73.90 + f, 81.15.Cd |
Ключові слова | Thin films (60) , Impurity (5) , Bismuth (9) , Tellurium (3) , Growth figure, Crystallite size (2) . |
Анотація |
The influence of doping degree on the structural characteristics of bismuth films doped with tellurium in the concentration range 0.005-0.150 at. % Te and the thickness range 0.3-0.7 (m is studied at present article. Authors have established that an increase of the doping degree with tellurium in bismuth films leads to a significant decreasing of the growth figures. The weak influence of annealing on the crystallite size of bismuth films doped with tellurium indicates their high temporal stability of the structure. |
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