Автори | Mahfoud Abderrezek1, Mohamed Fathi1, Farid Djahli2 |
Афіліація |
1L.I.S Laboratory, Department of Electronics, Faculty of Technology, University of Setif 1, 19000, Setif, Algeria 2L.I.S Laboratory, Department of Electronics, Faculty of Technology, University of Setif 1, 19000, Setif, Algeria |
Е-mail | mahfoud_cbi@yahoo.fr |
Випуск | Том 10, Рік 2018, Номер 2 |
Дати | Одержано 07.12.2017; опубліковано online 29.04.2018 |
Цитування | Mahfoud Abderrezek, Mohamed Fathi, Farid Djahli, J. Nano- Electron. Phys. 10 No 2, 02027 (2018) |
DOI | https://doi.org/10.21272/jnep.10(2).02027 |
PACS Number(s) | 68.60.Bs, 78.66.Bz |
Ключові слова | Thin film (101) , Solar cells (17) , Temperature (46) , CZTS (14) , CIGS (11) , SCAPS-1D (22) . |
Анотація |
The quaternary compound Cu2ZnSnS4 (CZTS) is considered as an alternative material to replace CIGS material in future manufacturing of thin film solar cells. In this paper, a comparative study of temperature effect on thin film CZTS (Cu2ZnSnS4) and CIGS (Cu(In, Ga)Se2) solar cells was leaded. For this purpose we used the one dimensional simulation program tool SCAPS-1D (Solar Cell Capacitance Simulator in one Dimension. The dependence of the CZTS and CIGS solar cells characteristics with temperature was investigated from 300°K to 360°K. The comparative results showed that the cell with CZTS had an improved behavior at high operation temperatures. The maximum power coefficients, depending on temperature variations, were respectively – 1.8 mW/cm2 °K and – 7.84 mW/cm2 °K. |
Перелік посилань |