Properties of Undoped and (Al, In) Doped ZnO Thin Films Prepared by Ultrasonic Spray Pyrolysis for Solar Cell Applications

Автори A. Djelloul1,2 , Y. Larbah3 , M. Adnane1 , B. Labdelli2, M.I. Ziane2, A. Manseri2, A. Messaoud2

1Département de Technologie des Matériaux, Faculté de Physique, Université des Sciences et de la Technologie d’Oran Mohamed Boudiaf USTO-MB, BP 1505, El M'naouer, 31000 Oran Algérie

2Centre de Recherche en Technologie des Semi-Conducteurs pour l’Energétique ‘CRTSE’, 02 Bd Frantz Fanon, BP 140, 7 Merveilles, Alger, Algérie

3Spectrometry Department, Nuclear Technical Division, Nuclear Research Center of Algiers, 2 Bd., Frantz Fanon, BP 399, Algiers 16000, Algeria

Випуск Том 10, Рік 2018, Номер 2
Дати Одержано 26 December 2017; у відредагованій формі 28 April 2018; опубліковано online 29 April 2018
Посилання A. Djelloul, Y. Larbah, M. Adnane, et al., J. Nano- Electron. Phys. 10 No 2, 02036 (2018)
PACS Number(s) 68.55. – a, 73.50. – h, 81.15.Cd, 81.15.Rs
Ключові слова A. Djelloul, Y. Larbah, M. Adnane, et al, J. Nano- Electron. Phys. 10 No 2, 02036 (2018).

Zinc oxide (ZnO) is an n-type semiconductor with a large optical gap (3.4 eV) belonging to the transparent conductive oxides family (TCO). Strongly present as optical window in the chalcopyrite based structures CIGS and CIS.The structural, morphological, optical and electrical properties of ZnO thin films deposited onto glass substrates by ultrasonic spray pyrolysis (USP) technique have been investigated. For comparison and a better understanding of physical properties of undoped and (Al, In) doped ZnO thin films, a number of techniques, including XRD, SEM, optical absorption method (UV) and four-point probe technique were used to characterize the obtained ZnO thin films. Structural analysis shows that all the films were found to be polycrystalline with a wurtzite structure and show a (1 0 1) preferential growth. Besides, we noted that the preferred orientation does not depend on the nature of dopant. The band gaps (Eg) varied from 3.35 to 3.37 eV by Al and In dopants.

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