Microchannel Structures of Betavoltaic Silicon Convertors

Автори V.V. Starkov1, S.A. Legotin2, A.A. Krasnov2 , V.N. Murashev2, Yu.K. Omel’chenko2, O.I. Rabinovich2, A.S. Laryushkin3
Приналежність

1 Institute of Technology microelectronics and high purity materials, Russian Academy of Sciences, 6, Institutskaya St. 142432 Chernogolovka, Russia

2 NUST “MISiS”, 4, Leninskiy Prosp., 119049 Moscow, Russia

3 JSC "Optocoupler" 105187, Shcherbakovskaya St., 53, Moscow, Russia

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Випуск Том 7, Рік 2015, Номер 4
Дати Одержано 29.09.2015, опубліковано online - 10.12.2015
Посилання V.V. Starkov, S.A. Legotin, A.A. Krasnov, et al., J. Nano- Electron. Phys. 7 No 4, 04047 (2015)
DOI
PACS Number(s) 00.05.Tp, 85.60.Jb
Ключові слова Betavoltic effect of power beta source (2) , Design optimization (3) , Silicon converter.
Анотація The paper presents the first results of experimental research on the microchannel structures of betavoltaic silicon converters based on the 63Ni isotope. The areas for further optimization of constructive and technological performance with high conversion efficiency were detected experimentally.

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