The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance

Автори S.A. Legotin1 , V.N. Murashev1 , S.Yu. Yurchuk1 , V.P. Yaromskiy2 , V.P. Astahov1 , K.A. Kuz’mina1 , O.I. Rabinovich1 , D.S. El’nikov1 , U.V. Osipov1 , A.A. Krasnov1 , S.I. Didenko1
Афіліація

1 NUST “MISiS”, 4, Leninskiy Prosp., 119040 Moscow, Russia

2 JSC "Scientific, Research & Production Corporation of Measuring Equipment", 2, Pioneer St., 141074 Moscow region, Korolev, Russia

Е-mail
Випуск Том 7, Рік 2015, Номер 4
Дати Одержано 29.09.2015, опубліковано online - 10.12.2015
Цитування S.A. Legotin, V.N. Murashev, S.Yu. Yurchuk, et al., J. Nano- Electron. Phys. 7 No 4, 04017 (2015)
DOI
PACS Number(s) 00.05.Tp, 85.60.Jb
Ключові слова Silicon p-i-n structure, Design optimization (3) .
Анотація In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of their investigation are presented. The results of the program usage based on an example of calculating the influence of the high-resistance "well" thickness in the silicon p-i-n-diode spectral response are discussed. For the accuracy of the program estimation it was compared the theoretical spectral characteristics of a silicon PIN-diode 5 kOhm substrate with the experimental data.

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