Автори | V.I. Panfilov1, M.A. Pugachevskii2, A.P. Kuzmenko3 , M.B. Dobromyslov4 |
Афіліація | 1 Far Eastern State Transport University, Khabarovsk, Russia 2 Institute of Materials Science, Khabarovsk Scientific Center, FEB RAS, Khabarovsk, Russia 3 Department of Nanotechnology & Engineering Physics, SWSU, Kursk, Russia 4 Pacific National University, Khabarovsk, Russia |
Е-mail | |
Випуск | Том 7, Рік 2015, Номер 4 |
Дати | Одержано 02.10.2015, опубліковано online - 24.12.2015 |
Цитування | V.I. Panfilov, M.A. Pugachevskii, A.P. Kuzmenko, M.B. Dobromyslov, J. Nano- Electron. Phys. 7 No 4, 04099 (2015) |
DOI | |
PACS Number(s) | 61.46.Df, 65.80.-g, 82.60.Qr |
Ключові слова | Laser ablation (2) , Nanoparticles (70) , Hafnium dioxide (2) , High-temperature phase. |
Анотація | The influence of the substrate temperature on the formation of high-temperature phases of hafnium dioxide in the process of pulsed laser ablation is investigated. It is established that the HfO2 nanoparticles of the high-temperature tetragonal and cubic phases with a quantitative content up to 50 % are formed on the surface of the substrate at room temperature during the laser ablation with intensity of 1010 W/m2. It is shown that with increasing the substrate temperature the average size of the ablated nanoparticles decreases and the quantitative content of the high-temperature phases is increased up to 70 %. |
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