Автори | K. Fellaoui, D. Abouelaoualim , A. Elkadadra , A. Oueriagli |
Афіліація | LPSCM, Department of Physics Faculty of Sciences Semlalia Cadi Ayaad University P.O. Box 2390, 40000 Marrakech, Morocco |
Е-mail | |
Випуск | Том 7, Рік 2015, Номер 4 |
Дати | Одержано 01.07.2015, опубліковано online - 24.12.2015 |
Цитування | K. Fellaoui, D. Abouelaoualim, A. Elkadadra, A. Oueriagli, J. Nano- Electron. Phys. 7 No 4, 04061 (2015) |
DOI | |
PACS Number(s) | 73.21.Fg, 42.55.Px |
Ключові слова | III-Nitride, AlGaN / GaN quantum wells (QWs), Optical gain (2) , Laser diodes. |
Анотація | In this study, we investigated numerically the effect of aluminum concentration, temperature and well width on optical gain GaN / AlxGa1 – xN quantum well lasers, taken into account effective mass approximation. The numerical results clearly show that the increasing of well width, and decreasing of temperature and Aluminum concentration, the optical gain increases. |
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