Автори | A.A. Krasnov1 , S.A. Legotin1 , Yu.K. Omel’chenko1, S.I. Didenko1 , V.N. Murashev1 , O.I. Rabinovich1 , S.Yu. Yurchuk1 , V.P. Yaromsky2, A.V. Popkova1 |
Афіліація | 1 NUST “MISiS”, 4, Leninskiy Prosp., 119049 Moscow, Russiа 2 JSC "Scientific, Research & Production Corporation of Measuring Equipment", 2, Pioneer St., 141074 Moscow region, Korolev, Russia |
Е-mail | |
Випуск | Том 7, Рік 2015, Номер 4 |
Дати | Одержано 28.09.2015, опубліковано online - 10.12.2015 |
Цитування | A.A. Krasnov, S.A. Legotin, Yu.K. Omel’chenko, et al., J. Nano- Electron. Phys. 7 No 4, 04004 (2015) |
DOI | |
PACS Number(s) | 00.05.Tp, 85.60.Jb |
Ключові слова | Betavoltaic effect betavoltaic battery, p-i-n diode (3) , Gettering. |
Анотація | It was developed the technology of manufacturing planar betavoltaic converter based on silicon, providing a higher rate of conversion of ionizing radiation into electrical energy by reducing reverse currents. The active region of silicon p-i-n structure is 1 cm2, which is irradiated by the of radionuclide 63Ni with the activity 2,7 mCi/cm2. The results of experimental studies of C-V samples are presented. The values of the open-circuit voltage (Voc) 0.111 V are presented and short circuit current density (Jsc) 27 nA/cm2. The ma-ximum density of output power (Pmax) was 1.52 nW/cm2. |
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