Автори | K.B. Eidelman1, K.D. Shcherbachev1, N.Yu. Tabachkova1, A.V. Goryachev2, D.M. Migunov2, D.A. Dronova2 |
Афіліація | 1 National University of Science and Technology «MISiS» 2 National Research University of Electronic Technology (MIET) |
Е-mail | eidelman@live.ru |
Випуск | Том 7, Рік 2015, Номер 4 |
Дати | Одержано 25.09.2015, опубліковано online - 10.12.2015 |
Цитування | K.B. Eidelman, K.D. Shcherbachev, N.Yu. Tabachkova, et al., J. Nano- Electron. Phys. 7 No 4, 04028 (2015) |
DOI | |
PACS Number(s) | 61.72.Up, 61.72.Yx |
Ключові слова | Zn nanoparticles, Double-step ion implantation, Phase formation. |
Анотація | This paper presents the research the formation of zinc-containing nanoparticles (NPs) in Si (001) after double-step hot implantation of 64Zn+ and 16O+ ions. High-resolution Transmission Electron Microscopy (HRTEM) and X-ray Diffraction (XRD) methods were used to study a crystal structure of the samples. Depth profiles of implanted impurity atoms were measured by Secondary Ion Mass Spectrometry (SIMS). Zn NPs with a size of 3 up to 50 nm were found in the implanted samples. Zinc-containing NPs with the size of 5-10 nm were found in the surface layer of as-implanted Si substrates. The effect of the order of implantation on structural defects and the impurity atoms depth profiles is established. |
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