Ionization of Impurities by a Constant Electric Field in Graphene with a Wide Forbidden Band
| Authors | S.Yu. Glazov1, 2 , P.V. Badikova1 |
| Affiliations |
1Volgograd State Social Pedagogical University, 27, Lenin Prosp., 400066 Volgograd, Russia 2Volgograd State Medical University, 1, Pavshikh Bortsov Sq., 400131 Volgograd, Russia |
| Е-mail | ser-glazov@yandex.ru |
| Issue | Volume 10, Year 2018, Number 2 |
| Dates | Received 15.01.2018; published online 29.04.2018 |
| Citation | S.Yu. Glazov, P.V. Badikova, J. Nano- Electron. Phys. 10 No 2, 02020 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(2).02020 |
| PACS Number(s) | 73.40.Gk, 72.80.Vp |
| Keywords | Ionization of impurities, Ionization probability, Tunneling (9) , Gap graphene modification. |
| Annotation |
An analytical expression for the probability of ionization of impurities in the gap modification of graphene in the presence of a constant electric field in the semiclassical approximation is received. The probability of ionization of impurities from the direction of the electric field strength vector is investigated. The probability of ionization in a constant electric field has a weakly pronounced anisotropy, manifested in the case when the width of the forbidden graphene band is greater than the energy of electron hopping between neighbouring lattice sites. The results are compared with those previously known for the spectrum given in the low-energy approximation. |
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List of References |
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