Mechanisms of Charge Transport in Anisotype Heterojunctions p-NiO/n-Si
| Authors | H.P. Parkhomenko , M.M. Solovan , P.D. Maryanchuk |
| Affiliations |
Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubynskogo Str., 58012 Chernivtsi, Ukraine |
| Е-mail | |
| Issue | Volume 10, Year 2018, Number 2 |
| Dates | Received 20 November 2017, published online 29 April 2018 |
| Citation | H.P. Parkhomenko, M.M. Solovan, P.D. Maryanchuk, J. Nano- Electron. Phys. 10 No 2, 02028 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(2).02028 |
| PACS Number(s) | 72.20. – i |
| Keywords | Heterojunction (6) , Charge transport mechanisms, NiO (20) , SiС. |
| Annotation |
Heterostructure p-NiO/n-SiС was fabrication by reactive magnetron sputtering thin films nickel oxide on substrates with crystal n-SiС. Studied their the dark current-voltage characteristics in a wide temperature range. It was found that the main charge transport mechanisms when a forward bias is generation-recombination and tunneling. In reverse bias, the main mechanism of current transfer is tunneling through a potential barrier involving an energy level with a depth of 0.47 eV. |
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List of References English version of article |
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