Transport Phenomena for Development Inductive Elements Based on Silicon Wires

Authors A.A. Druzhinin1,2 , I.P. Ostrovskii1 , Yu.M. Khoverko1,2 , R.M. Koretskyy1, M.Yu. Chernetskiy1
Affiliations

1Lviv Polytechnic National University, 12, S. Bandera Str., 79013 Lviv, Ukraine

2Institute of Low Temperature and Structure Research, Wroclaw, Poland

Е-mail [email protected]
Issue Volume 10, Year 2018, Number 2
Dates Received 17 January 2018; revised manuscript received 27 April 2018; published online 29 April 2018
Citation A.A. Druzhinin, I.P. Ostrovskii, et al., J. Nano- Electron. Phys. 10 No 2, 02038 (2018)
DOI https://doi.org/10.21272/jnep.10(2).02038
PACS Number(s) 73.43.Qt, 71.30. + h, 73.25. + i
Keywords Silicon wires, Impedance spectroscopy (4) , Metal-insulator transition (3) , Inductive element.
Annotation

Conductance and magnetoresistance of Si < B > whiskers with diameters 5-40 μm doped with boron impurity were investigated in temperature range 4.2 ÷ 300 К, frequency range 1÷105 Hz and magnetic fields with intensity up to 14 Т by method of impedance spectroscopy. Hopping conductance on impurity states was shown to be realized in the crystals in low temperature region. The studies allow us to obtain parameters of hopping conduction. On the basis of experimental results a miniature inductive element was created using silicon wire.

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