Features of the Influence of High-energy Gamma-irradiation Small Doses on the Photoelectric and Spectral Characteristics of Intrinsic Oxide-InSe Structures

Authors O.M. Sydor, O.A. Sydor , Z.D. Kovalyuk

Chernivtsi Department of the Institute of Materials Science Problems, 5, Iryny Vil’de Str., 58001 Chernivtsi, Ukraine

Е-mail sydor.oleh@gmail.com
Issue Volume 10, Year 2018, Number 2
Dates Received 08 November 2017, published online 29 April 2018
Citation O.M. Sydor, O.A. Sydor, Z.D. Kovalyuk, J. Nano- Electron. Phys. 10 No 2, 02023 (2018)
DOI https://doi.org/10.21272/jnep.10(2).02023
PACS Number(s) 81.65.Mq, 78.20. – e, 78.56. – a, 61.80.Ed
Keywords Layered semiconductor, Indium selenide, Gamma-irradiation, Thermal oxidation, Intrinsic.

In this article, the influence of small doses (D 140 Gy) of bremsstrahlung gamma-quanta (Eeff 3 МеV) with the fluences 1012-1013 cm – 2 on photoelectric and spectral parameters of two types of intrinsic oxide-InSe heterostructures (HSs) obtained after the short-term (60 min) and long-term (96 h) oxidation are studied. The photoresponce spectra (h) did not show essential changes of the shape or the energy position with irradiation. Only positive increase of the absolute values of photocurrent and the appearance of the exciton maximum at room temperature were observed. It was shown that the both types of the HSs demonstrated a tendency to improving their parameters. Thus, the slope of the long-wave edge of the photoresponce spectra was increased, current SI and voltage SU monochromatic sensitivities and open circuit voltage Uoc, short-circuit current Jsc were increased too. The effect of irradiation results in the appearance of simple point defects of vacancy nature, their interaction with the defect structure of the layered semiconductor at minimum effecting gamma-quanta on the intrinsic oxide of the layered crystal.

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