Photo-electrical Properties of Silicon Structures with Nano-composite Epoxy-polymeric Layer
| Authors | V.I. Shmid, S.P. Nazarov, А.О. Podolian, А.B. Nadtochiy, O.A. Korotchenkov |
| Affiliations |
Kyiv National Taras Shevchenko University, 2, Akad. Glushko Prosp., 03022 Kyiv, Ukraine |
| Е-mail | hmdvi@gmail.com |
| Issue | Volume 10, Year 2018, Number 2 |
| Dates | Received 31 October 2017; revised manuscript received – 28 April 2018; published online 29 April 2018 |
| Citation | V.I. Shmid, S.P. Nazarov, А.О. Podolian, et al., J. Nano- Electron. Phys. 10 No 2, 02024 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(2).02024 |
| PACS Number(s) | 73.61.Ph, 73.50.Pz |
| Keywords | Kinetics of SPV, Nanocomposite films, PV (26) . |
| Annotation |
Surface PV, FTIR spectroscopy, and frequency dependence of the permittivity measurements were used to study the structure of the "silicon lining / nanocomposite epoxy-polymer layer." It was found that the deposition of nanocomposite films based on epoxy resin with SiO2 powder on a silicon substrate leads to the decrease in the amplitude of the PV with simultaneous retardation of its relaxation.The data obtained are explained on the assumption that the interaction of the carbonyl and hydroxyl groups of the bond with the active centers of the surface of the SiO2 particles and the establishment of SiO and SiN bonds on the surface-bearing surface changes the conditions for the recombination of the charge carriers and the bending of the bands in the near-surface Si layer. |
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List of References English version of article |
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