Structure Features of Bismuth Films Doped with Tellurium

Authors D.Yu. Matveev1, D.V. Starov1, E.V. Demidov2
Affiliations

1Astrakhan State University, 20a, Tatischev Str., 414056 Astrakhan, Russia

2Herzen State Pedagogical University, 6, Kazanskaya (Plekhanova) Str., 191186 St. Petersburg, Russia

Е-mail anila200586@mail.ru
Issue Volume 10, Year 2018, Number 2
Dates Received 31 October 2017; published online – 29 April 2018)
Citation D.Yu. Matveev, D.V. Starov, E.V. Demidov, J. Nano- Electron. Phys. 10 No 2, 02047 (2018)
DOI https://doi.org/10.21272/jnep.10(2).02047
PACS Number(s) 73.90 + f, 81.15.Cd
Keywords Thin films (57) , Impurity (4) , Bismuth (7) , Tellurium (3) , Growth figure, Crystallite size (2) .
Annotation

The influence of doping degree on the structural characteristics of bismuth films doped with tellurium in the concentration range 0.005-0.150 at. % Te and the thickness range 0.3-0.7 (m is studied at present article. Authors have established that an increase of the doping degree with tellurium in bismuth films leads to a significant decreasing of the growth figures. The weak influence of annealing on the crystallite size of bismuth films doped with tellurium indicates their high temporal stability of the structure.

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