Entropy of Cluster System in Silicon Melt

Authors S.L. Khrypko , Oleksandr K. Golovko
Affiliations

Zaporizhzhia State Engineering Academy, 226, Sobornyi Ave., 69006 Zaporizhzhia, Ukraine

Е-mail [email protected]
Issue Volume 10, Year 2018, Number 2
Dates Received 03 November 2017; published online 29 April 2018
Citation S.L. Khrypko, Oleksandr K. Golovko, J. Nano- Electron. Phys. 10 No 2, 02015 (2018)
DOI https://doi.org/10.21272/jnep.10(2).02015
PACS Number(s) 61.20.Gy, 81.07.Bc
Keywords Micro- and nanoelectronics, Silicon (58) , Melt (6) , Microcluster, Nuclear chain, Density of probabilities, Entropy (3) .
Annotation

The full entropy's cluster component of the silicon melt is defined in the assumption of gamma-distribution of microcluster in the form of chains with covalent interatomic bonds. The entropy is calculated for temperatures characteristic of the practice of growing single crystals from the melt, as well for the precipitation of silicon from the vapor phase of individual silicon clusters. The estimation results are consistent with literary data for clusters' entropy in simple liquids. The entropy of two- and three-atom microcluster at temperatures close to the melting point of silicon changes not monotonously. This indicates that in the process of growing a single crystal in silicon melt there is a continuous structural alteration near to the crystallization front. This work's aim is to deepen the understanding of the crystallization's structural aspects of elementary semiconductors from melt, which may be useful for improving the processes of growing their single crystals and amorphous films.

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