Thin Film Systems Based on ZnO/SiC and ZnO/C

Authors A.Kh. Abduev , A.K. Akhmedov , A.Sh. Asvarov , S.Sh. Makhmudov
Affiliations

Institute of Physics, Dagestan Scientific Center Russian Academy of Sciences, 94, Yaragskogoy Str., 367015 Makhachkala, Russia

Е-mail cht-if-ran@mail.ru
Issue Volume 10, Year 2018, Number 2
Dates Received 12 January 2018; revised manuscript received 25 April 2018; published online 29 April 2018
Citation A.Kh. Abduev, A.K. Akhmedov, A.Sh. Asvarov, S.Sh. Makhmudov, J. Nano- Electron. Phys. 10 No 2, 02041 (2018)
DOI https://doi.org/10.21272/jnep.10(2).02041
PACS Number(s) 68.65.Ac, 81.15.Cd,
Keywords Thin film (101) , Magnetron sputtering (14) , ZnO (81) , Carbon (56) , SiC (25) .
Annotation

The processes of formation of Zn/X/ZnO three-layer structures (where X – intermediate layer of C or SiC) by magnetron sputtering are studied. The processes taking place at the ZnO/C and ZnO/SiC interfaces of the multylayered films upon annealing in an inert gas are investigated. It is shown that the differences in the morphology and structure of the ZnO sublayers after annealing are due to the difference in chemical reactions occurring at the interfaces and the diffusion mechanisms of the components along the grain boundaries.

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