Electrical and Photoelectrical Properties of Surface Barrier Structures MoOx/n-Si
| Authors | M.M. Solovan |
| Affiliations |
Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubynskogo Str., 58012 Chernivtsi, Ukraine |
| Е-mail | |
| Issue | Volume 10, Year 2018, Number 2 |
| Dates | Received 10 November 2017, published online 29 April 2018 |
| Citation | M.M. Solovan, J. Nano- Electron. Phys. 10 No 2, 02030 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(2).02030 |
| PACS Number(s) | 47.15.km, 72.20. – i |
| Keywords | Heterostructure (7) , Potential barrier, Charge transport mechanisms, Energy diagram, МoOx, Si (561) . |
| Annotation |
МоOх/n-Si heterojunctions were prepared by the deposition of МоOх thin films by means of the reactive magnetron sputtering technique onto silicon substrates. Current-voltage characteristics (I-V) of the prepared heterojunctions were measured at different temperatures. The temperature dependence of the height of the potential barrier and series resistance was analyzed. The energy diagram of the heterojunctions under investigation was developed. The concentration of the surface states at the heterojunction was estimated and the dominant charge transport mechanisms were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage Voc ( 0.167 V and short-circuit current Isc ( 8.56 мА/см2 under illumination 80 mW/сm2). |
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List of References English version of article |
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