Electron Scattering for Uniaxially Deformed n-Ge Single Crystals

Authors S.V. Luniov

Lutsk National Technical Univercity, 75, Lvivska Str., 43018 Lutsk, Ukraine

Issue Volume 7, Year 2015, Number 3
Dates Received 10 March 2015; published online 20 October 2015
Citation S.V. Luniov, J. Nano- Electron. Phys. 7 No 3, 03029 (2015)
PACS Number(s) 72.10. – d, 72.20.Fr
Keywords Uniaxial deformation, Equivalent and nonequivalent intervalley scattering, n-Ge single crystals, L1 and Δ1 minima, Hall coefficient.
Annotation The electron scattering in the (L1 – Δ1) model of the conduction band of n-Ge single crystals formed by uniaxial pressure along the crystallographic direction [100] has been investigated. Obtained experimental results and performed theoretical calculations show that nonequivalent intervalley electron scattering bet-ween L1 and Δ1 minima becomes significant for the range of uniaxial pressures from 1.4 to 2.3 GPa and the relative contribution of this scattering depends on the magnitude of the uniaxial pressure. The presence of the maximum for the dependences of the Hall coefficient on the uniaxial pressure for P ~ 2.1 GPa, when the energy gap between L1 and Δ1 “is closed”, is explained by greatest efficiency of the given scattering mechanism for such pressures.

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