Optical Properties of PECVD Si-C-N Films
| Authors | A.O. Kozak , V.I. Ivashchenko , O.K. Porada , L.A. Ivashchenko , V. Ya. Malakhov, T.V. Tomila |
| Affiliations | Institute for Problems of Materials Sciences, NAS of Ukraine, 3, Krzhyzhanovsky Str., 03142 Kyiv, Ukraine |
| Е-mail | |
| Issue | Volume 7, Year 2015, Number 3 |
| Dates | Received 31 July 2015; revised manuscript received 14 October 2015; published online 15 October 2015 |
| Citation | A.O. Kozak, V.I. Ivashchenko, O.K. Porada, et al., J. Nano- Electron. Phys. 7 No 3, 03040 (2015) |
| DOI | |
| PACS Number(s) | 78.66.Jg |
| Keywords | PECVD (6) , Hexamethyldisilazane, Si-C-N films, FTIR (30) , Optical spectra. |
| Annotation | The structural properties and the energy gap of Si-C-N films deposited by PECVD method from hexamethyldisilazane in the temperature range of 200-700 °C were studied. The films were deposited on silicon and glass substrates that made it possible to perform the XRD analysis and study the absorption infrared (FTIR) and optical spectra. The deconvolution of main band by Gaussians indicates that the main contributions come from the vibrations of Si-C, Si-N and Si-O bonds. It is shown that an intensive effusion of hydrogen from the films occurs with increasing temperature. The band gap decreases from 2.3 to 1.6 eV as substrate temperature is changed from 200 to 700 °C. |
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