Synthesis of Indium Nitride Epitaxial Layers on a Substrate of Porous Indium Phosphide

Authors J.A. Suchikova

Berdyansk State Pedagogical University, 4, Schmidt Str., 71106 Berdyansk, Ukraine

Issue Volume 7, Year 2015, Number 3
Dates Received 02 May 2015; published online 20 October 2015
Citation J.A. Suchikova, J. Nano- Electron. Phys. 7 No 3, 03017 (2015)
PACS Number(s) 61.43Gt, 78.30Fs, 78.55m
Keywords Indium nitride, Porous indium phosphide, Buffer layer epitaxy, Electrochemical etching, Lattice constant (2) .
Annotation The paper presents a technique to obtain InN films on porous InP substrates by radical-beam gettering epitaxy. According to the results of the Auger spectroscopy, InN film thickness ranged from 100 nm to 0.5 microns depending on the etching conditions.

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