Synthesis of Indium Nitride Epitaxial Layers on a Substrate of Porous Indium Phosphide
| Authors | J.A. Suchikova |
| Affiliations | Berdyansk State Pedagogical University, 4, Schmidt Str., 71106 Berdyansk, Ukraine |
| Е-mail | |
| Issue | Volume 7, Year 2015, Number 3 |
| Dates | Received 02 May 2015; published online 20 October 2015 |
| Citation | J.A. Suchikova, J. Nano- Electron. Phys. 7 No 3, 03017 (2015) |
| DOI | |
| PACS Number(s) | 61.43Gt, 78.30Fs, 78.55m |
| Keywords | Indium nitride, Porous indium phosphide, Buffer layer epitaxy, Electrochemical etching, Lattice constant (2) . |
| Annotation | The paper presents a technique to obtain InN films on porous InP substrates by radical-beam gettering epitaxy. According to the results of the Auger spectroscopy, InN film thickness ranged from 100 nm to 0.5 microns depending on the etching conditions. |
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List of References English version of article |
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