Fill Factor Losses in mc-Si Solar Cells

Authors A.V. Prykhodko

Zaporizhzhya National University, 66, Zhukovsky Str., 69600 Zaporizhzhya, Ukraine

Issue Volume 7, Year 2015, Number 3
Dates Received 24 February 2015; published online 20 October 2015
Citation A.V. Prykhodko, J. Nano- Electron. Phys. 7 No 3, 03007 (2015)
PACS Number(s) 88.40.jj
Keywords Solar cell (51) , mc-Si (2) , Fill factor losses, Parasitic ohmic resistance, Dark saturation current, Diode ideality factor.
Annotation Non-fundamental losses in mc-Si solar cells have been studied. These efficiency losses significantly depend on diode quality and parasitic ohmic resistances that result in the fill factor losses. The fill factor losses in mc-Si solar cells were analyzed by testing of the industrial solar cell lot under AM1.5 conditions. The observed fill factor reduction due to both dark saturation current and diode ideality factor increasing is explained by their exponential relationship which has been found experimentally. Additionally, solar cell maximum power losses through the parasitic ohmic resistances have been estimated and discussed. The obtained results may be used to a solar cell efficiency enhancement and hence reduction in a solar electricity cost.

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