About the Nature of Electroluminescence Centers in Plastically Deformed Crystals of p-type Silicon

Authors B.V. Pavlyk , M.O. Kushlyk , D.P. Slobodzyan

Ivan Franko National University of Lviv, 107, Tarnavskyi Str., 79017 Lviv, Ukraine

Е-mail [email protected]
Issue Volume 7, Year 2015, Number 3
Dates Received 28 July 2015; published online 20 October 2015
Citation B.V. Pavlyk, M.O. Kushlyk, D.P. Slobodzyan, J. Nano- Electron. Phys. 7 No 3, 03043 (2015)
PACS Number(s) 61.72.Hh, 61.72.Lk, 61.72.Uf, 68.35.Dv, 72.20.Jv, 73.20.Hb, 73.40.Sx, 73.40.Qv, 78.60.Fi
Keywords p-type silicon, Dislocation electroluminescence, Recombination centers, Plastic deformation (5) , High-temperature annealing.
Annotation The paper describes research of dislocation electroluminescence of single crystal p-type silicon with a high concentration of dislocations on the surface (111). It is shown the reaction of the luminescence spectra and capacitive-modulation spectra of samples after high-temperature annealing in an atmosphere of flowing oxygen. The analysis of the results lets us to establish the nature of recombination centers and their reorganization under high-temperature annealing. It is shown that deposition of Al film on the substrate p-Si leads to the formation of strain capacity and the localization of defects in the surface layer that corresponds to luminescence centers.

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