The Nuclear Quadrupole Resonance and Sensory Properties of GaSe and InSe Layered Semiconductors

Authors A.P. Samila1 , V.O. Khandozhko2, Z.D. Kovalyuk3
Affiliations

1 Yuriy Fedkovych Chernivtsi National University, 2, Kotsjubynskyi Str., 58012 Chernivtsi, Ukraine

2 Broadcasting company «NBM», 26, Elektrikov Str., 04176 Kyiv, Ukraine

3 Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, Chernivtsi Branch, 5, Iryna Vilde Str., 58001 Chernivtsi, Ukraine

Е-mail asound@ukr.net
Issue Volume 7, Year 2015, Number 3
Dates Received 21 May 2015; revised manuscript received 23 June 2015; published online 20 October 2015
Citation A.P. Samila, V.O. Khandozhko, Z.D. Kovalyuk, J. Nano- Electron. Phys. 7 No 3, 03024 (2015)
DOI
PACS Number(s) 76.60.Gv, 07.20.Dt, 07.07.Df
Keywords Nuclear quadruple resonance, FPGA, InSe (4) , GaSe (3) , Temperature and pressure sensors.
Annotation The temperature and pressure dependences of NQR in indium and gallium monoselenides are studied by means of pulse NQR radiospectroscopy with fast Fourier transform of the spin induction signals. An experimental installation pulse NQR method based on multi-functional software-controlled digital processing core is implemented in the FPGA Altera Cyclone. It was found from NQR spectra of 69Ga and 115In isotopes that semiconductor GaSe and InSe compound can be used when creating the temperature sensors in the range of 20÷130 °C. For crystals investigated the accuracy of the temperature determination is ± 0.05 °C. It was found that the use of these layered compounds for measuring uniaxial pressure using NQR is possible at pressures up to 50÷100 kg/cm2, where the manifestation of the hysteresis is not significant.

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