Electron Mobility in Cadmium Sulfide

Authors O.P. Malyk1, V.M. Rodych2, H.A. Ilchuk2

1 Lviv Polytechnic National University, Semiconductor Electronics Department, 1, St. Yura Sq., 79013 Lviv, Ukraine

2 Lviv Polytechnic National University, Physics Department, 12, S. Bandera Str., 79013 Lviv, Ukraine

Е-mail [email protected]
Issue Volume 7, Year 2015, Number 3
Dates Received 09 June 2015; published online 20 October 2015
Citation O.P. Malyk, V.M. Rodych, H.A. Ilchuk, J. Nano- Electron. Phys. 7 No 3, 03019 (2015)
PACS Number(s) 72.20.Dp
Keywords Transport phenomena, Charge carrier scattering, Cadmium sulfide.
Annotation The processes of the electron scattering by the short-range potential caused by the interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers, ionized and neutral impurities in CdS crystals with impurity concentration of ≈ 5.6 × 1016÷8.7 × 1017 cm – 3 are considered. The temperature dependences of the electron mobility and Hall factor in the temperature range of 10÷400 K are calculated.

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