Hydrogenation of Laser-crystallized a-Si:H Films

Authors M.V. Khenkin1 , D.V. Amasev1, A.G. Kazanskii1 , P.A. Forsh1,2

1 Lomonosov Moscow State University, 1, Leninskie Gory, 119991 Moscow, Russia

2 National Research Centre “Kurchatov Institute”, 1, Akademika Kurchatova Pl.,123182 Moscow, Russia

Е-mail mark.khenkin@gmail.com
Issue Volume 7, Year 2015, Number 3
Dates Received 11 August 2015; published online 20 October 2015
Citation M.V. Khenkin, D.V. Amasev, A.G. Kazanskii, P.A. Forsh, J. Nano- Electron. Phys. 7 No 3, 03048 (2015)
PACS Number(s) 71.23.Cq, 73.50.Pz, 79.20.Ds
Keywords Amorphous hydrogenated silicon (2) , Nanocrystalline hydrogenated silicon, Laser crystallization (2) , Hydrogen content, Post-hydrogenation.
Annotation Ultrafast laser processing of semiconductors is a rapidly developing field of material science at the moment. In particular, femtosecond laser crystallization of amorphous hydrogenated silicon thin films has a big potential in photovoltaics. However laser treatment causes dehydrogenation process which decreases materials’ photosensitivity and thus limiting its application for optoelectronics. In present paper we studied photoelectric properties of laser-modified amorphous silicon films. Two different hydrogenation procedures were employed to restore films’ hydrogen content: keeping in hydrogen plasma and in high-pressure hydrogen atmosphere. The effectiveness of applied procedures for increasing materials’ photosensitivity is discussed.

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