Authors | S.Yu. Yurchuk, S.A. Legotin , V.N. Murashev , A.A. Krasnov , Yu.K. Omel’chenko, Yu.V Osipov, S.I. Didenko , O.I. Rabinovich |
Affiliations | NUST “MISiS”, 4, Leninskiy Prosp., 119040 Moscow, Russia |
Е-mail | |
Issue | Volume 7, Year 2015, Number 3 |
Dates | Received 27 April 2015; revised manuscript received 14 October 2015; published online 20 October 2015 |
Citation | S.Yu. Yurchuk, S.A. Legotin, J. Nano- Electron. Phys. 7 No 3, 03014 (2015) |
DOI | |
PACS Number(s) | 00.05.Tp, 85.60.Jb |
Keywords | Betavoltic effect of power beta source (2) , Modeling the characteristics of the spectral sensitivity, Design optimization (3) . |
Annotation | In this paper the simulation of silicon beta-stimulated power sources spectral sensitivity characteristics was carried out. It was analyzed the influence of the semiconductor material characteristics (the doping level, lifetime) and power supply design on the photosensitive structures characteristics in order to optimize them. |
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