Simulation the Beta Power Sources Characteristics

Authors S.Yu. Yurchuk, S.A. Legotin , V.N. Murashev , A.A. Krasnov , Yu.K. Omel’chenko, Yu.V Osipov, S.I. Didenko , O.I. Rabinovich

NUST “MISiS”, 4, Leninskiy Prosp., 119040 Moscow, Russia

Issue Volume 7, Year 2015, Number 3
Dates Received 27 April 2015; revised manuscript received 14 October 2015; published online 20 October 2015
Citation S.Yu. Yurchuk, S.A. Legotin, J. Nano- Electron. Phys. 7 No 3, 03014 (2015)
PACS Number(s) 00.05.Tp, 85.60.Jb
Keywords Betavoltic effect of power beta source (2) , Modeling the characteristics of the spectral sensitivity, Design optimization (3) .
Annotation In this paper the simulation of silicon beta-stimulated power sources spectral sensitivity characteristics was carried out. It was analyzed the influence of the semiconductor material characteristics (the doping level, lifetime) and power supply design on the photosensitive structures characteristics in order to optimize them.

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