Автори | Messaadi Lotfi1, Dibi Zohir2 |
Афіліація | 1 University of Batna, Advanced Electronic Laboratory (LEA), Avenue Mohamed El-Hadi Boukhlouf, 05000, Batna, Algeria 2 University of Batna, Advanced Electronic Laboratory (LEA), Avenue Mohamed El-Hadi Boukhlouf, 05000, Batna, Algeria |
Е-mail | lotfi.messaadi@gmail.com |
Випуск | Том 9, Рік 2017, Номер 1 |
Дати | Одержано 17.12.2016, у відредагованій формі - 08.02.2017, опубліковано online - 20.02.2017 |
Цитування | Messaadi Lotfi, Dibi Zohir, J. Nano- Electron. Phys. 9 No 1, 01002 (2017) |
DOI | 10.21272/jnep.9(1).01002 |
PACS Number(s) | 73.30. + y, 85.30.Hi |
Ключові слова | Silicon carbide (9) , Reverse recovery (3) , Schottky diode (10) , Temperature effect, Modeling (20) , pspice (5) , ABM, Characterization (6) . |
Анотація | This paper presents a SiC Schottky diode model including static and dynamic features implemented as a parameterized block constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for this block are easy to extract, even from readily available diode data sheet information. This model can easily simulate the diode’s reverse recovery and power losses behavior over all temperatures from 0 °C to 175 °C. |
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