Quantum Colliding of Two the Vertical Bloch Lines in the Domain Walls of Uniaxial Ferromagnetic Film
| Authors | A.B. Shevchenko1, M.Yu. Barabash2 |
| Affiliations |
1G.V. Kurdymov Institute of Metal Physics, National Academy of Science of Ukraine, 36, Vernadskyi Prosp., 03680 Kyiv-142, Ukraine 2Technical Centre, National Academy of Science of Ukraine, 13, Pokrovska Str., 04070 Kyiv, Ukraine |
| Е-mail | andborshev@ukr.net |
| Issue | Volume 10, Year 2018, Number 4 |
| Dates | Received 17 March 2018; revised manuscript received 14 August 2018; published online 25 August 2018 |
| Citation | A.B. Shevchenko, M.Yu. Barabash, J. Nano- Electron. Phys. 10 No 4, 04026 (2018) |
| DOI | http://dx.doi.org/10.21272/jnep.10(4).04026 |
| PACS Number(s) | 75.70.kw:75.45 + j |
| Keywords | Magnetic film, Stripe domain, Domain wall (4) , Vertical Bloch line, Sub-barrier passage. |
| Annotation |
On the basis of the quasiclassical approximation, the process of sub-barrier mutual passage of small segments of length of two unipolar vertical Bloch lines (nanoscale solitons of “kink” type) in the domain wall of an isolated stripe domain formed in a uniaxial ferromagnetic film with strong magnetic anisotropy have been investigated. It is shown that this effect occurs due to the account of their quantum oscillations, which excited by an external magnetic field in the subhelium temperature range. The conditions for this phenomenon are determined. It is established that sub-barrier mutual passage of two vertical Bloch lines occurs in stronger magnetic fields than the corresponding tunneling of their length small segments. It is also shown that an increase in the magnetic anisotropy of the film leads to a decrease in the values of the magnetic fields in which the given quantum process proceeds. The obtained result is of practical interest in the context of creating unit cell for a hybrid bit+qubit memory devices based on the vertical Bloch lines. |
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List of References English version of article |
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