Topography and Surface Density of Electron States on Juvenile and Defect Nanostructured (100) Cleavage Surfaces of In4Se3 Layered Crystals

Authors P.V. Galiy1 , P. Mazur2 , A. Ciszewski2 , T.M. Nenchuk1 , I.R. Yarovets1, Ya.M. Buzhuk1 , O.R. Dveriy3

1Ivan Franko Lviv National University, 50, Dragomanov Str., 79005 Lviv, Ukraine

2Institute of Experimental Physics, University of Wrocław, pl. Maxa Borna 9, 50-204 Wrocław, Poland

3Hetman Petro Sahaidachnyi National Army Academy, 32, Geroiv Majdanu Str., 79012 Lviv, Ukraine

Issue Volume 10, Year 2018, Number 4
Dates Received 15 March 2018; published online 25 August 2018
Citation P.V. Galiy P. Mazur, A. Ciszewski, et al., J. Nano- Electron. Phys. 10 No 4, 04002 (2018)
PACS Number(s) 68.47.Fg, 61.46._w, 68.37.Ef, 68.37.Ps, 61.05.Jh
Keywords Layered crystals, Interlayer cleavage surfaces, Topography (2) , Scanning tunneling and atomic force microscopy and spectroscopy, Surface defects, Surface density of states.

The results of complex experimental study of In4Se3 layered crystal cleavage surfaces by methods of low energy electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS) and atomic force microscopy and spectroscopy (AFM/AFS) are presented. System study of nanostructured semiconductor anisotropic matrices, such as cleavage (100) surfaces of In4Se3 was conducted with the purpose to obtain nanosystems on them as substrate. The influence of different kinds of defects (point, linear, macro defects) of interlayer (100) In4Se3 layered crystal cleavage surfaces on their topography and local density of surface electronic states (LDOS) and their electron energy structure was studied. It has been established the significant influence of different defect's concentrations on LDOS and on electron-energy structure of interlayer cleavage surfaces for all layered crystals.

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