| Authors | S.P. Pavlyuk , V.I. Grygoruk , V.M. Telega , M.V. Petrychuk, A.V. Ivanchuk |
| Affiliations |
Taras Shevchenko National University of Kyiv, 4g GlushkovAve., 03022 Kyiv, Ukraine |
| Е-mail | pps@univ.kiev.ua |
| Issue | Volume 10, Year 2018, Number 4 |
| Dates | Received 10 April 2018; published online 25 August 2018 |
| Citation | S.P. Pavlyuk, V.I. Grygoruk, V.M. Telega, et al., J. Nano- Electron. Phys. 10 № 4, 04010 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(4).04010 |
| PACS Number(s) | 73.40.Ty, 00.00.Хх |
| Keywords | SSDI structure, Extreme current, Voltage oscillations. |
| Annotation |
In the work, studies of voltage oscillations that occur during the flow of high-density currents through a silicon structure with dielectric insulation (SSDI structure) are carried out. Volt-ampere characteristics of the structure in the pulsed mode, characteristic parameters of the oscillograms of oscillations, both relaxation and quasi-harmonic, were studied. A model of the occurrence of oscillations is proposed. |
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List of References English version of article |