Parametric Study of Stacked Microstrip Patch Antenna with Dissimilar Substrates
| Authors | S. Bouttout1, Y. Bentrcia1, S. Benkouda 2, T. Fortaki1 |
| Affiliations |
1Electronics Department, University of Batna 2, 05000 Batna, Algeria 2Electronics Department, University of Constantine 1, 25000 Constantine, Algeria |
| Е-mail | sarah.boutout@yahoo.com |
| Issue | Volume 10, Year 2018, Number 4 |
| Dates | Received 20 January 2018; revised manuscript received 09 August 2018; published online 25 August 2018 |
| Citation | S. Bouttout, Y. Bentrcia, et al., J. Nano- Electron. Phys. 10 № 4, 04004 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(4).04004 |
| PACS Number(s) | 77.22.Ch, 84.40. – x, 84.40.Ba |
| Keywords | Stacked Microstrip Patches, Resonance (8) , Dissimilar Substrates, Ual Frequency, Mutual Coupling. |
| Annotation |
A complete parametric study of stacked rectangular microstrip patches printed on non-magnetic isotropic substrate is performed. The numerical results are obtained by applying the method of moments to the electric field integral equations. Detailed closed-form expressions of Green’s functions are presented. The new results found indicate that, the lower resonant frequency is mainly determined by the patch etched on the thicker layer. The layer having the higher permittivity defines which resonance is mainly determined by the bottom patch, either the upper resonance if the upper layer has the higher permittivity, or the lower resonance in opposite case. All these results offer better understanding and thus a better control of the dual-band operating of the microstrip antenna. Therefore, a proper choice of the antenna parameters becomes possible in order to obtain the desired functional characteristics. |
|
List of References |
Other articles from this number
1) Impact of Sputtering Pressure on Structural, Optical, Electrical and Morphological Properties of Titanium Doped Zinc Oxide Thin films Using Metallic Target [04001-1-04001-5]2) Topography and Surface Density of Electron States on Juvenile and Defect Nanostructured (100) Cleavage Surfaces of In4Se3 Layered Crystals [04002-1-04002-12]
3) New Nonrelativistic Three-Dimensional Spectroscopic Studies of NMGECSC Potential in Presence of External Electric [04003-1-04003-8]
4) Kinetics of Blue Emission during Ultraviolet Insolation on Germanosilicate Optical Fiber [04005-1-04005-5]
5) Electrons Extraction from MWCNT/PEO Composites [04006-1-04006-5]
6) Optimizing Combination of Parameters for Pull-off Adhesion Testing through Design of Experiment Study [04007-1-04007-7]
7) Thermodynamic Analysis of the Crystallization Process of Alloys Ni-Zr System [04008-1-04008-4]
8) Photoluminescence Properties of Nanoheterogenic Film Structures of NCs CdTe/TGA/Vinyl Acetate-Acrylate Copolymer [04009-1-04009-4]
9) The Mechanism of Voltage Oscillations in a Siliceous Structure with the Occurrence of Extreme Currents [04010-1-04010-4]
10) The Theoretical Study of Electron Dispersion of Some Liquid Metals Using Transition Metal Model Potential (TMMP) [04011-1-04011-4]
11) An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET [04012-1-04012-5]
12) Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D [04013-1-04013-4]
13) Gunn Diodes Based on Graded InGaP-InPAs [04014-1-04014-6]
14) Peculiarities of Electroconductivity and Magnetoresistance in Silicon Whiskers with Doping Concentration in the Vicinity to Metal-insulator Transition at Low Temperatures [04015-1-04015-7]
15) Magnetoresistive and Magnetooptical Properties of Double-component Film Alloys Based on Iron [04016-1-04016-4]
16) A New Electro-Thermal Modeling of Low Voltage Power MOSFET with Junction Tempera-ture Dependent Foster (RC) Thermal Network [04017-1-04017-5]
17) Dislocation Hysteresis in Mixed State of Superconductor II Тype [04018-1-04018-6]
18) p-i-n Photodiode Based on Silicon with Short Rise Time [04019-1-04019-5]
19) Improvement of Electrochemical Supercapacitors by Using Nanostructured Semiconductors [04020-1-04020-6]
20) Computer Simulation of the Negative Hydrogen Ion Source Extraction System Using IBSimu Package [04021-1-04021-9]
21) Photoinduced Spatiotemporal Oscillations and Self-Organization of Dissipative Structures in Polymer-Immobilized Dispersed Semiconductors [04022-1-04022-8]
22) Investigation of Photoelectric Converters Based on Different Semiconductor Materials [04023-1-04023-6]
23) Electrical Conductivity and Dielectric Relaxation Processes of the Ceramic System Y2O3-ZrO2-SrTiO3-BiScO3 [04024-1-04024-4]
24) Increase the Efficiency of the Linear Piezoelectric Motor [04025-1-04025-5]
25) Quantum Colliding of Two the Vertical Bloch Lines in the Domain Walls of Uniaxial Ferromagnetic Film [04026-1-04026-4]
26) A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs [04027-1-04027-4]
27) The Increase in the Probability of Failure-Free Operation of the IR-Devices Homing and Tracking by the of Electron Beam Processing of Optical Fairings on the Areas [04028-1-04028-7]
28) PbMnI2 Magnetic Studies of PbMnI2 Layered Diluted Magnetic Semiconductor Nanoparticles [04029-1-04029-5]
29) Ab initio Calculation of Impurity-Dislocation Interaction in Silicon [04030-1-04030-5]
30) Influence of Heat Treatment Conditions on the Magnetoresistive Properties of Three-layer Structures Fe0,2Co0,8/Cu/Fe0,2Co0,8 [04031-1-04031-5]
31) Features of the Structure of the FeCoNiCrMn High Entropy Alloys [04032-1-04032-10]
32) Anthracite-derived Porous Carbon as Electrode Material of Lithium Power Sources [04033-1-04033-5]
33) Ab initio Study of the Effect of H2O Molecules Adsorption on the Semiconducting Graphene Nanoribbon [04034-1-04034-3]
