p-i-n Photodiode Based on Silicon with Short Rise Time

Authors Yu.G. Dobrovolsky, O.P. Andreeva, M.S. Gavrilyak, L.J. Pidkamin, G.V. Prokhorov

Yu. Fedkovych Chernivtsi National University, 2, Kotsyubinsky Str., 58012, Chernivtsi, Ukraine

Issue Volume 10, Year 2018, Number 4
Dates Received 06 February 2018; revised manuscript received 10 August 2018; published online 25 August 2018
Citation Yu.G. Dobrovolsky, O.P. Andreeva, M.S. Gavrilyak, et al., J. Nano- Electron. Phys. 10 No 4, 04019 (2018)
DOI http://dx.doi.org/10.21272/jnep.10(4).04019
PACS Number(s) 85.60.Dw, 85.30. – z
Keywords Photodiode, Rise time, Boundary frequency, Current-generation.

The factors that influence the rise time of the photodiode are investigated and analyzed. Using the obtained results, a photodiode based on a high-ohmic silicon of p-type conductivity with a minimized rise time has been developed. The proposed construction. contains a contact on the back of the crystal of a photodiode, which is not continuous, but has a hole. Such a hole is the projection of a photosensitive element on the reverse side of the crystal of a photodiode. The value of the rise time of this photodiode is no more than 9 ns compared to 37 ns in the FD-255 A analogue.

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