Improvement of Electrochemical Supercapacitors by Using Nanostructured Semiconductors

Authors S.O. Vambol1, I.T. Bohdanov2, V.V. Vambol1, Y.O. Suchikova2, O.M. Kondratenko1, T.P. Nestorenko1, S.V. Onyschenko2
Affiliations

1 National University of Civil Defense of Ukraine, 94, Chernyshevskaya Str., 61023 Kharkiv, Ukraine

2Berdyansk State Pedagogical University, 4, Schmidt Str., 71100 Berdyansk, Ukraine

Е-mail [email protected]
Issue Volume 10, Year 2018, Number 4
Dates Received 11 February 2018; published online 25 August 2018
Citation S.O. Vambol, I.T. Bohdanov, V.V. Vambol, et al., J. Nano- Electron. Phys. 10 No 4, 04020 (2018)
DOI http://dx.doi.org/10.21272/jnep.10(4).04020
PACS Number(s) 61.43Gt, 81.65.Cf, 84.60. – h
Keywords Supercapacitor (3) , Semiconductors (25) , Electrode (10) , Phosphide india, Nanostructures (7) , Electrochemical etching.
Annotation

The paper considers ways to increase the efficiency of electrochemical supercapacitors by using electrodes of porous semiconductors as electrodes. The technique of manufacturing porous layer on the surface of indium phosphide is presented. The basic regularities of the formation of porous spaces and the dependence of morphological properties on the patterns of etching are established. In order to provide the chemical inertia of the nanostructured surface, it is proposed to cover it with a layer of graphite. This increases the resistance of the resulting structures and becomes the basis for their use as electrodes of supercapacitors.

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English version of article